IEEE C62.35-2010 PDF
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IEEE Standard Test Methods for Avalanche Junction Semiconductor Surge-Protective Device Components
IEEE , 08/31/2010
File Format: PDF
- Description
Description
IEEE C62.35-2010 PDF
This standard applies to two terminal or multiple terminal silicon avalanche breakdown diodes (ABD), which are one type of surge protective device component (SPDC). In this document, these devices will be called ABDs. ABDs limit (clamp) transient voltages and divert transient currents. This standard contains terms, symbols and definitions, and provides test methods for verifying ratings and measuring device characteristics. Service conditions and failure mode are also provided. This standard may also apply to other silicon surge protective device components with similar V-I characteristics.
These test methods are required to characterize the device for applications in high speed circuits and determine the effects of data loss due to crosstalk and insertion loss. Additionally, these tests will provide the designer with protection effectiveness of the component when used to protect sensitive IC components & equipment. Standardized test methods are needed to insure component performance when subjected to fast transient events such as ESD and EFT.
Revision Standard – Superseded. Superseded by C62.59-2019. Avalanche breakdown diodes used for surge protection in systems with voltages equal to or less than 1000 V rms or 1200 V dc are discussed in this standard. The avalanche breakdown diode surge suppressor is a semiconductor diode which can operate in either the forward or reverse direction of its V-I characteristic. This component is a single package, which may be assembled from any combination of series and/or parallel diode chips.
